當前位置：上海巨納科技有限公司>>二維材料>>碲化物晶體>>PtTe2 二碲化鉑晶體

PtTe2 二碲化鉑晶體

返回列表頁

參考價

面議

具體成交價以合同協(xié)議為準

產(chǎn)品型號

品牌

廠商性質(zhì)其他

所在地上海

在線詢價收藏產(chǎn)品查看聯(lián)系電話

聯(lián)系方式：袁文軍查看聯(lián)系方式

更新時間：2024-02-14 14:22:31瀏覽次數(shù)：108次

聯(lián)系我時，請告知來自環(huán)保在線

產(chǎn)品分類 品牌分類

  二維材料

二維材料粉末

二維材料溶液

碲化物晶體

硒化物晶體

硫化物晶體

絕緣體

鈣鈦礦

異質(zhì)結

MOFS材料

二維材料薄膜

黑磷

六方氮化硼

其他二維材料

全部產(chǎn)品列表

暫無信息

上海巨納科技有限公司

經(jīng)營模式：其他

商鋪產(chǎn)品：574條

所在地區(qū)：

聯(lián)系人：袁文軍

詢價 給他留言

產(chǎn)品簡介

簡要描述：Platinum ditelluride （PtTe2） is a member of transition metal dichalcogenide （TMDCs） family with the MX2 formula.

詳細介紹

Platinum ditelluride (PtTe2) is a member of transition metal dichalcogenide (TMDCs) family with the MX2 formula. In the bulk form, it is an established metal with complex bａnd structure, in the monolayer it is arguably both semiconductor with bａnd gap value in the far IR or metallic (J. Phys. C: Solid State Phys. 19, 995).

As they are semiconductor grade and highly crystalline, you do not need to worry about amorphous phase, defects, or contamination. The crystal size is very large in size and they are perfectly layered in the 001 direction (c-axis - see XRD pattern-) and thus it is very easy to exfoliate and yield monolayers up to 100& yield rate. Single domain size is much larger than 50 microns which enables you to yield large monolayer areas.

The crystals were measured and confirmed by x-ray diffraction (XRD), x-ray photoelectron spectroscopy, Raman, SIMS, and Auger electron spectroscopy techniques.

4 years of growth optimization : In these 4 years, we have perfected our PtTe? growth to fit to your needs. We offer perfect stoichiometry (no other hidden phases), no amorphous regions, superior domain sizes yielding large monolayers, Our crystals have impressive semiconductor purity levels (99.9995 or higher) to bring you highest quality materials at large sizes.

Growth method matters> Flux zone or CVT growth method? Contamination of halides and point defects in layered crystals are well known cause for their reduced electronic mobility, poor e-h recombination, low-PL emission, and lower optical absorption. Flux zone technique is a halide free technique used for synthesizing truly semiconductor grade vdW crystals. This method distinguishes itself from chemical vapor transport (CVT) technique in the following regard: CVT is a quick (~2 weeks) growth method but exhibits poor crystalline quality and the defect concentration reaches to 1E11 to 1E12 cm-2 range. In contrast, flux method takes long (~3 months) growth time, but ensures slow crystallization for perfect atomic structuring, and impurity free crystal growth with defect concentration as low as 1E9 - 1E10 cm-2. So if your research needs truly high quality crystals for optoelectronics, scanning tunneling microscopy, spectroscopy, and other projects that rely on defect free crystals, flux zone growth is ideal for you. However, if you need catalytic materials presence of defects typically helps and in such case CVT method is better suited. During check out just state which type of growth process is preferred. Unless otherwise stated, 2Dsemiconductors ships Flux zone crystals as a default choice.