當(dāng)前位置：上海巨納科技有限公司>>二維材料>>其他二維材料>>GeP 磷化鍺晶體

GeP 磷化鍺晶體

返回列表頁

參考價

面議

具體成交價以合同協(xié)議為準(zhǔn)

產(chǎn)品型號2D Semiconductor

品牌

廠商性質(zhì)其他

所在地上海

在線詢價收藏產(chǎn)品查看聯(lián)系電話

聯(lián)系方式：袁文軍查看聯(lián)系方式

更新時間：2024-02-15 13:51:29瀏覽次數(shù)：75次

聯(lián)系我時，請告知來自環(huán)保在線

產(chǎn)品分類 品牌分類

  二維材料

二維材料粉末

二維材料溶液

碲化物晶體

硒化物晶體

硫化物晶體

絕緣體

鈣鈦礦

異質(zhì)結(jié)

MOFS材料

二維材料薄膜

黑磷

六方氮化硼

其他二維材料

全部產(chǎn)品列表

暫無信息

上海巨納科技有限公司

經(jīng)營模式：其他

商鋪產(chǎn)品：574條

所在地區(qū)：

聯(lián)系人：袁文軍

詢價 給他留言

產(chǎn)品簡介

簡要描述：GeP has highly anisotropic dispersions of bａnd structures, with a layer-dependent indirect bａnd gap from （theoretically predicted） 1.68 eV of monolayer to 0.51 eV of bulk.

詳細(xì)介紹

GeP has highly anisotropic dispersions of bａnd structures, with a layer-dependent indirect bａnd gap from (theoretically predicted) 1.68 eV of monolayer to 0.51 eV of bulk. GeP is an anisotropic semiconductor much similar to GaTe monoclinic structure. Our single crystal GeP (Germanium phosphide) crystals come with guaranteed optical, electronic, and structural anisotropy. They are developed at our facilities using state-of-art flux zone techniques. Each growth takes close to three months to provide you perfected crystals that does not contain any halides. Each crystal is highly crystalline, oriented in 0001 direction, and easy to exfoliate. Our R&D staff takes characterization dataset in each sample piece to ensure structural, optical, and electronic consistency. Please also see our GeS, GeSe, GeTe, GeAs, GeP, and Ge-based solutions.

Characteristics of vdW GeP crystals