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上海巨納科技有限公司
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上海巨納科技有限公司
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簡(jiǎn)要描述：P-type electronically doped Bismuth Selenide （Bi?Se?） Developed at our facilities since early 2011 to optimize the perfect stoichiometry and stabilize the topological insulator state.
P-type electronically doped Bismuth Selenide (Bi?Se?) Developed at our facilities since early 2011 to optimize the perfect stoichiometry and stabilize the topological insulator state. Bismuth Selenide (Bi?Se?) Developed at our facilities since early 2011 to optimize the perfect stoichiometry and stabilize the topological insulator state. Bi2Se3 crystals are topological insulator material in which its bulk is insulating while its surface states are conducting. The surface states of topological insulator are robust against any external perturbation because such states are protected by time-reversal symmetry. Similar to transition metal dichalgonides and graphite, Bi?Se? is also layered material with weak interlayer coupling. Our crystals are develop in our laboratories in last two years and are highly crystalline. Raman spectrum displays very sharp and clear modes with FWHM less than 4cm-1. If your research needs doping in Bi2Se3, we can also incorporate Ca, Nb, Ni, and Au dopants in Bi2Se3 crystals.
Characteristics of Bi2Se3 crystals
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