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當(dāng)前位置：武漢茂迪科技有限公司>>>>Kurt J.Lesker原子層沉積ALD150LX™

Kurt J.Lesker原子層沉積ALD150LX™

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產(chǎn)品型號ALD150LX™

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廠商性質(zhì)其他

所  在  地武漢市

聯(lián)系方式：王先生查看聯(lián)系方式

更新時(shí)間：2024-04-28 09:24:40瀏覽次數(shù)：53次

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經(jīng)營模式：其他

商鋪產(chǎn)品：476條

所在地區(qū)：

聯(lián)系人：王先生

產(chǎn)品簡介

OverviewTheKurtJ

詳細(xì)介紹

Overview

The Kurt J. Lesker Company® (KJLC®) ALD150LX™ is an Atomic Layer Deposition (ALD) system designed specifically for advanced research and development (R&D) applications. Innovative ALD150LX™ design features, like our Patented Precursor Focusing Technology™, blended with advanced process capability provide unparalleled flexibility and performance. With an emphasis on enabling and supporting innovative, cutting edge technology at the R&D level, the ALD150LX™ serves not only as a stand-alone platform, but provides connectivity with additional process and analysis modules in a cluster tool configuration.

ALD150LX™ cluster tool connectivity eliminates unwanted atmosphere exposure between critical process and analysis steps to protect sensitive surfaces, layers and their interfaces. This connectivity includes the integration of additional ALD and analysis modules, as well as other KJLC® thin film deposition technologies for multi-technique process and analysis capability and support that are second-to-none in the industry. Combined quality, flexibility and performance, as well as multi-technique process and analysis capability make the ALD150LX™ an innovative, best-in-class design.

Technical Description

Process Chamber

  • Thermal or plasma-enhanced (PEALD) configurations
  • Perpendicular flow design
  • Four separate chamber inlets for precursor delivery (not including plasma)
  • Analytical ports for in-situ ellipsometry
  • Horizontal substrate loading port (up to 150 mm diameter substrates)
  • Independent substrate heater stage

Precursors

  • High-performance, remote inductively coupled plasma (ICP) source with up to six plasma gas lines
  • Up to fifteen precursor sources with four separate chamber inlets (not including plasma)
  • Variety of precursor delivery options are available including vapor draw, flow-through and pulsed gas delivery
  • Exposure modes include dynamic, static and Variable Residence Mode™ (VRM™)
  • Ozone source

Typical Processes

  • Al2O3, TiO2, SiO2, Ta2O5, HfO2, ZrO2, HZO, ZnO, AZO, AIN, TiN, GaN, Pt, and Ru

System Heating

  • Independent substrate heater stage capable of up to 500°C operation
  • Process chamber and precursor delivery line heating up to 250°C
  • Precursor heating up to 200°C
  • Delivery Line heating up to 250°C
  • Up to 200°C Valve Heating

Software & Controls

  • KJLC® eKLipse™ system control software (LabView based)
  • Real time controller
  • True precision ALD valve timing

Process Pump

  • Rotary vane pump (53 cfm) with foreline purge/vent protection and oil filtration
  • Dry pump
  • Customer supplied process pump

Substrate Transfer

  • Manual loading
  • Load-Lock (single or multi-wafer cassette)
  • Cluster Tool
  • Glove Box




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