The ME7170-G is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density,DMOS trench technology.This high density process is especially tailored to minimize on-state resistance.These devices are particularly suited for low voltage application such as notebook computer power management and other battery powered circuits where Low-side switching,and low in-line power loss are needed in a very small outline surface mount package.
應用:
●筆記本中的電源管理
NB/MB Vcore低壓側(cè)開關(guān)
●便攜式設備
●電池供電系統(tǒng)
●DC/DC轉(zhuǎn)換器
●負荷開關(guān)
● RDS(ON)≦2.6m?@VGS=10V
● RDS(ON)≦3.9mΩ@VGS=4.5V
● Super high density cell design for extremely low RDS(ON)
● Exceptional on-resistance and maximum DC current capability